Work Function Estimation of Bismuth Doped ZNO Thin Film

Al-Doped ZnO Thin Film Transistors by Thermal Evaporation

In this paper, Al-doped ZnO thin film transistors (AZO-TFT) were fabricated by the thermal evaporation growth of AZO channel layer on a silicon substrate at temperatures below 250°C. A SiO2 dielectric layer grown by the horizontal furnace was used as a gate. An active layer thickness of 10nm was measured by Atomic Force Microscopy (AFM), and its surface had root mean square (rms) roughness 12.6...

Exploration of ZnO and ZnMgO/ZnO Thin Film Transistors

Transparent conductive Nd-doped ZnO thin films

Transparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of optical and electrical properties of the films were obtained and correlated to the composition and crystalline structure. The Nd-doped ZnO films are smooth, dense, and display t...

Hazardous o-toluidine mineralization by photocatalytic bismuth doped ZnO slurries.

Photocatalytic mineralization of o-toluidine in aqueous media under UV/solar irradiation was achieved by bare and bismuth doped zinc oxide nanoparticles. By adopting different analytical approaches a reaction mechanism is proposed, explaining the differences in photodetoxification performances.

Growth of Ga-doped ZnO thin film prepared by MOCVD for TCO application

The group-III elements, such as Al, Ga and In, are possible dopants for ZnO to improve the electric conductivity of ZnO thin film. Since Ga has lower cost than In and has higher oxidation resistance than Al, it becomes the preferred dopants for ZnO thin film for transparent conducting oxide (TCO) application. In the research, we used MOCVD method with Ga doping to prepare the Ga-doped ZnO thin ...